Depth Profile Analysis of Phosphorus Implanted SiC Structures
نویسندگان
چکیده
منابع مشابه
Microstructural evolution of helium-implanted a-SiC
Helium has a decisive effect on the microstructure of silicon carbide materials after implantation and subsequent annealing. A dense population of bubbles and dislocation loops is already observed at relatively low displacement doses after annealing of helium-implanted a-SiC, while no visible damage appears after irradiation without helium implantation under otherwise equal conditions. The defe...
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The present work aims at the design of 3C-SiC Double Implanted Metal Oxide Semiconductor Field Effect Transistor (DIMOSFET) with Gaussian doping profile in drift region for high breakdown voltages. By varying the device height ‘h’, function constant m and peak concentration N0, analysis has been done for an optimum profile for high breakdown voltage. With Gaussian profile peak concentration N0 ...
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ژورنال
عنوان ژورنال: Acta Physica Polonica A
سال: 2015
ISSN: 0587-4246,1898-794X
DOI: 10.12693/aphyspola.128.864